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1.0 GHz SILICON MMIC AMPLIFIER
FEATURES
* BROADBAND PERFORMANCE: 10 to 1100 MHz * INPUT AND OUTPUT MATCHED TO 50 * AVAILABLE IN CHIP OR HERMETIC PACKAGE * EXCELLENT LINEARITY Over +10 dBm Saturated Output Power * CASCADABLE FOR MULTISTAGE APPLICATIONS * HIGH RELIABILITY
Noise Figure, NF (dB)
10 9 8 7
UPC1654A
NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY
22
20 18 16
6
VCC = 11.5 V VCC = 10 V VCC = 8 V
14
5 4 0 1 20 50 100 200 500 1000 2000
12 10 0
Frequency, f (MHz)
DESCRIPTION
The UPC1654A Silicon Microwave Monolithic IC is designed for general purpose and IF amplifier applications. This amplifier is matched to 50 and is cascadable for multi-stage applications. The UPC1654A features excellent linearity with 10 dBm saturated output power and broadband performance up to 1100 MHz. Reliability and performance uniformity are assured by NEC's stringent quality control procedures. The UPC1654A is available in a hermetically sealed package.
ELECTRICAL CHARACTERISTICS (TA = 25C, VCC = 10 V, f = 500 MHz)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS BW PSAT NF RLIN RLOUT ISOL RTH (J-C) PARAMETERS AND CONDITIONS Operating Current Small Signal Gain Bandwidth (The gain is 3 dB down from the gain at 100 MHz.) Saturated Output Power Noise Figure Input Return Loss Output Return Loss Isolation Thermal Resistance (Junction to Case) UNITS mA dB MHz dBm dB dB dB dB C/W 15 9 24 MIN 38 17 950 9 UPC1654A 15 TYP 43 19 1100 10 5.5 18 12 27 30 6.5 MAX 48 21
California Eastern Laboratories
Associated Gain, GA (dB)
UPC1654A ABSOLUTE MAXIMUM RATINGS (TA = 25C)
SYMBOLS VCC PT PIN TOP TSTG PARAMETERS Supply Voltage Total Power Dissipation2 Input Power Operating Temperature Storage Temperature UNITS V mW dBm C C RATINGS 12 750 +10 -55 to +125 -65 to +200
EQUIVALENT CIRCUIT
VCC
OUT
Note: 1. Operation in excess of any one of these parameters may result in . permanent damage. 2. At TA = +125C.
IN
GND
TYPICAL PERFORMANCE CURVES (TA = 25C)
OUTPUT POWER vs. INPUT POWER AND VOLTAGE
16 VCC = 11.5 V VCC = 10 V VCC = 8 V 12 f = 500 MHz
+15 +10
OUTPUT POWER vs. INPUT POWER, TEMPERATURE AND FREQUENCY
f = 500 MHz
Output Power, POUT (dBm)
Output Power, POUT (dBm)
+5 0 -5 -10 -15 -20 TA = 25C TA = 95C f = 1100 MHz
8
4
0 -15 -13 -11 -9 -7
-20 -15 -10 -5 0 +5
Input Power, PIN (dBm)
Input Power, PIN (dBm)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
60
SATURATED OUTPUT POWER vs. FREQUENCY
15 VCC = 10 V
Circuit Current, ICC (mA)
50
40
30
Saturated Output Power (dBm)
0 2 4 6 8 10 12
10
20
10
0
5 50 100 200 500 1000 2000
Supply Voltage, VCC (V)
Frequency, f (MHz)
UPC1654A TYPICAL PERFORMANCE CURVES (TA = 25C)
OPERATING CURRENT AND LINEAR GAIN vs. AMBIENT TEMPERATURE
24 23 22 VCC = 10 V 46
INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY
VCC = 10 V
Operating Current, ICC (mA)
0
21 20 19 18 17 16 15 ICC 500 MHz Linear Gain 1000 MHz Linear Gain -50 0 50 100 150 40 42 44
Input Return Loss (dB) Output Return Loss (dB)
Gain, GS (dB)
-10 Output -20 Input -30
-40
50
100
200
500
1000
2000
Ambient Temperature, TA (C) ISOLATION vs. FREQUENCY
VCC = 10 V
Frequency, f (GHz)
0
Isolation, (dB)
-10 -20 -30 -40
50
100
200
500
1000
2000
Frequency, f (MHz)
OUTLINE DIMENSIONS (Units in mm)
UPC1654A PACKAGE OUTLINE 15 (TO-33)
9.40 MAX 8.50 MAX
0.38
6.60 MAX
19.0 MIN
LEAD CONNECTIONS 1. Output 2. VCC 3. Input 4. GND
0.45 5.08 2 1 3 4 0.8 0.8
45
Notes: 1. Case should be connected to ground for stable RF operation and optimum thermal dissipation. 2. All dimensions are typical unless otherwise noted. EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA
CALIFORNIA EASTERN LABORATORIES, INC
*
Headquarters
*
4590 Patrick Henry Drive
*
Santa Clara, CA 95054-1817
*
(408) 988-3500
*
Telex 34-6393/FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE

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